A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate......

本论文主要研究Hf-Ti-O薄膜作为栅介质材料的MOS和ETSOI MOSFET器件性能.通过MOS器件性能研究,得到以Hf-Ti-O薄膜作为栅介质材料具......

首次制备了完全CMOS工艺兼容的铝掺杂二氧化铪铁电材料金属-铁电层-绝缘层-半导体场效晶体管,并对其电学特性,如I-V,C-V等进行测量......